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| AP6679GS/P RoHS-compliant Product Advanced Power Electronics Corp. Lower On-resistance Simple Drive Requirement Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 9m -75A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. GD S TO-263(S) The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GP) are available for low-profile applications. G Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 3 D TO-220(P) S Units V V A A A W W/ -30 +25 -75 -50 -300 89 0.71 Rating Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 1.4 40 62 Unit /W /W /W Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 200812304 AP6679GS/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-30A VGS=-4.5V, ID=-24A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Min. -30 -1 - Typ. 34 42 6 25 11 35 58 78 960 740 Max. Units 9 15 -3 -1 -250 +100 67 V m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=-250uA VDS=-10V, ID=-24A VDS=-30V, VGS=0V VGS= +25, VDS=0V ID=-16A VDS=-24V VGS=-4.5V VDS=-15V ID=-16A RG=3.3,VGS=-10V RD=0.94 VGS=0V VDS=-25V f=1.0MHz Drain-Source Leakage Current (T j=125 C) VDS=-24V, VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 2870 4590 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-24A, VGS=0V IS=-16A, VGS=0V, dI/dt=-100A/s Min. - Typ. 47 43 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is -75A . 4.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP6679GS/P 280 150 240 T C =25 o C -10V -8.0V -ID , Drain Current (A) -6.0V 100 T C =150 o C -10V -8.0V -6.0V -4.5V -ID , Drain Current (A) 200 160 120 -4.5V 50 80 V G =-3.0V 40 V G =-3.0V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.0 0.5 1.0 1.5 2.0 2.5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 15 1.6 I D = -24A T C = 25 13 I D = -30A V G = -10V 1.4 Normalized RDS(ON) 2 4 6 8 10 RDS(ON) (m ) 1.2 11 1.0 9 0.8 7 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.2 30 1.8 T j =150 o C T j =25 o C -VGS(th) (V) 1.2 1.4 20 -IS(A) 1.4 10 1 0 0 0.2 0.4 0.6 0.8 1 0.6 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP6679GS/P 7 10000 f=1.0MHz 6 -VGS , Gate to Source Voltage (V) 5 C iss C (pF) I D = -16A V DS = -24V 4 1000 3 C oss C rss 2 1 0 0 10 20 30 40 50 60 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 100us 100 Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 -ID (A) 0.1 1ms 0.1 0.05 PDM 0.02 t T 10 o T C =25 C Single Pulse 10ms 100ms 1s DC 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 1 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 E E3 E1 E2 D2 SYMBOLS MIN Millimeters NOM MAX A A1 A2 4.25 0.00 2.20 0.70 1.07 0.30 1.15 8.30 4.75 0.15 2.45 0.90 1.27 0.45 1.30 8.90 5.10(ref) 1.27(ref) 5.20 0.30 2.70 1.10 1.47 0.60 1.45 9.40 D1 D b b1 c c1 D L2 b1 L3 b D1 D2 E E1 E2 9.70 10.10 7.40(ref) 6.40(ref) 8.00(ref) 10.50 e L4 E3 e L1 L2 2.04 2.54 2.54(ref) 1.50 3.04 A A A2 L3 L4 c1 c1 4.50 0 4.90 1.50 ----- 5.30 5 c A1 A1 L1 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-263 Part Number meet Rohs requirement for low voltage MOSFET only 6679GS YWWSSS Package Code LOGO Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 E L2 A SYMBOLS Millimeters MIN NOM MAX L1 A 4.25 0.65 1.15 0.40 1.00 9.70 -----12.70 2.60 1.00 2.60 14.70 6.30 3.50 8.40 4.48 0.80 1.38 0.50 1.20 10.00 --2.54 13.60 2.80 1.40 3.10 15.50 6.50 3.70 8.90 4.70 0.90 1.60 0.60 1.40 10.40 11.50 ---14.50 3.00 1.80 3.60 16.00 6.70 3.90 9.40 L5 c1 b b1 c c1 E E1 D L4 e L L1 L2 L3 L4 L5 L3 b1 L D b c 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-220 Part Number meet Rohs requirement for low voltage MOSFET only Package Code 6679GP LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 6 |
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